TGF2018 180 um discrete gaas phemt datasheet: rev. d 11-04-13 - 1 of 8 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com applications ? defense & aerospace ? high-reliability ? test and measurement ? commercial ? broadband wireless product features ? frequency range: dc - 20 ghz ? 22 dbm typical output power - p1db ? 14 db typical gain at 12 ghz ? 55% typical pae at 12 ghz ? 1 db typical nf at 12 ghz ? no vias ? technology: 0.25 um gaas phemt ? chip dimensions: 0.41 x 0.34 x 0.10 mm functional block diagram general description the triquint TGF2018 is a discrete 180 micron phemt which operates from dc to 20 ghz. the TGF2018 is fabricated using triquint?s proven standard 0.25 um power phemt production process. this process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. the TGF2018 typically provi des 22 dbm of output powe r at p1db with gain of 14 db and 55% power-added efficiency at 1 db compression. this performance makes the TGF2018 appropriate for high efficiency applications. the protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. the TGF2018 is lead-free and rohs compliant. pad configuration pad dimensions terminals g (71um x 71um) gate d (71um x 71um) drain s (121um x 71um) source ordering information part eccn description TGF2018 ear99 180 um gaas phemt
TGF2018 180 um discrete gaas phemt datasheet: rev. d 11-04-13 - 2 of 8 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com absolute maximum ratings symbol parameter absolute continuous units v ds drain-source voltage (2) 12 8 v v gs gate- source voltage -7 -3 v i ds drain current (2) i dss i dss ma i g,f forward gate current 9 1.5 ma t ch channel temperature (3) 175 (4) 150 (5) c t stg storage temperature -65 to 150 -65 to 150 c p in input continuous wave power (2) 16 at 3 db compression dbm p tot total power dissipation 0.96 0.64 w notes: 1. these ratings represent the maximum operable values for this device. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device and/ or affect device lifetime. these are stress ratings only, and functional operation of the device at these conditions is not implied. 2. combinations of supply volt age, supply current, input power, and output power shall not exceed the maximum total power dissipation listed in the table. 3. junction operating temperature will dire ctly affect the device median time to failu re. for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 4. when operated at this channel temper ature, the median life is 1.0e+5 hours. 5. when operated at this channel temper ature, the median life is 1.0e+6 hours. electrical characteristics test conditions unless otherwise noted: temperature ? = ? 25c. symbol parameter conditions min typ max units p1db output power at 1db compression freq ? = ? 12 ? ghz v ds ? = ? 8 ? v i ds ? = ? 50% ? i dss 22 dbm g1db gain at p1db 14 db pae pae at p1db 55 % nf 50 ohm noise figure v ds ? = ? 2 ? v, i ds ? = ? 19 ma 1 db i dss saturated drain current v ds ? = ? 2 ? v, v gs ? = ? 0 ? v 36 58 (1) 80 ma gm transconductance v ds ? = ? 2 ? v, i ds ? = ? 50% ? i dss 70 ms v p pinch-off voltage v ds ? = ? 2 ? v, i ds ? = ? 0.18 ? ma -1.5 -1.0 -0.5 v bv gd gate-drain breakdown voltage i g ? = ? 0.18 ? ma, source open -15 -12 v bv gs gate-source breakdown voltage i g ? = ? 0.18 ? ma, drain open -15 v r th thermal resistance (2) ausn eutectic attach 88 c/w notes: 1. typical standard deviation of 2 ? ma (1 ? ). 2. based on ir scan
TGF2018 180 um discrete gaas phemt datasheet: rev. d 11-04-13 - 3 of 8 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com s-parameters test conditions: v ds =+8 v (typ.), i ds =50% i dss, temp=+25 c, 50 system freq (ghz) s11 (mag) s11 (ang) s21 (mag) s21 (ang) s12 (mag) s12 (ang) s22 (mag) s22 (ang) 1 0.99 -18.1 5.99 166.0 0.015 77.5 0.81 -6.7 2 0.97 -36.0 5.84 153.9 0.029 68.2 0.80 -13.3 3 0.95 -53.8 5.62 141.9 0.042 58.6 0.77 -19.2 4 0.92 -71.3 5.36 130.0 0.053 49.1 0.74 -24.9 5 0.89 -88.0 5.06 118.7 0.062 40.2 0.71 -30.5 6 0.86 -103.9 4.73 108.0 0.069 31.8 0.67 -35.6 7 0.84 -119.1 4.41 97.9 0.075 24.2 0.64 -40.1 8 0.82 -133.8 4.09 88.4 0.079 17.1 0.61 -43.7 9 0.81 -147.6 3.78 79.3 0.081 10.4 0.58 -47.4 10 0.80 -160.3 3.48 70.7 0.082 4.0 0.55 -50.8 11 0.79 -171.7 3.20 62.6 0.082 -1.5 0.53 -54.5 12 0.79 178.0 2.96 55.1 0.082 -6.7 0.51 -58.0 13 0.80 168.4 2.74 47.8 0.082 -11.5 0.50 -61.9 14 0.80 159.9 2.55 40.8 0.080 -16.2 0.49 -65.9 15 0.81 152.1 2.37 34.4 0.079 -19.8 0.48 -69.4 16 0.82 144.8 2.22 28.4 0.077 -23.0 0.47 -72.0 17 0.83 138.1 2.07 22.2 0.076 -26.3 0.47 -76.3 18 0.83 132.0 1.93 16.2 0.074 -29.8 0.46 -81.2 19 0.83 126.4 1.79 10.7 0.071 -32.7 0.45 -85.9 20 0.84 121.9 1.70 5.3 0.069 -34.4 0.46 -91.0 21 0.86 116.9 1.60 -0.1 0.068 -36.7 0.45 -95.7 22 0.87 112.5 1.51 -5.5 0.066 -39.0 0.46 -100.8 23 0.87 108.4 1.42 -10.7 0.064 -41.3 0.46 -105.7 24 0.88 104.5 1.34 -15.7 0.062 -42.6 0.46 -111.5 25 0.88 100.9 1.27 -20.7 0.060 -43.7 0.47 -116.2 26 0.89 97.5 1.20 -25.7 0.059 -45.0 0.47 -121.6 includes 1 bond wire on gate, 1 bond wire on drain, and 3 bond wires on each source pad.
TGF2018 180 um discrete gaas phemt datasheet: rev. d 11-04-13 - 4 of 8 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com noise parameters v ds ? = ? 2 ? v, i ds ? = ? 28 ? ma, temperature ? = ? 25c v ds ? = ? 2 v, i ds ? = ? 14 ma, temperature ? = ? 25c frequency nfmin rn/50 gamma frequency nfmin rn/50 gamma ghz db mag. angle ghz db mag. angle 2 0.57 0.291 0.71 17.58 2 0.48 0.257 0.75 16.41 3 0.62 0.283 0.68 23.87 3 0.50 0.251 0.73 21.69 4 0.61 0.275 0.65 32.18 4 0.49 0.243 0.70 28.68 5 0.64 0.265 0.62 41.66 5 0.51 0.236 0.67 36.7 6 0.70 0.249 0.59 51.44 6 0.55 0.223 0.64 45.03 7 0.78 0.230 0.56 61.44 7 0.59 0.209 0.62 53.61 8 0.85 0.210 0.54 71.62 8 0.64 0.194 0.59 62.42 9 0.93 0.192 0.52 81.92 9 0.68 0.179 0.57 71.41 10 1.00 0.173 0.50 92.27 10 0.74 0.164 0.55 80.53 11 1.08 0.155 0.48 102.61 11 0.80 0.148 0.53 89.74 12 1.17 0.138 0.47 112.89 12 0.85 0.136 0.52 99.01 13 1.24 0.123 0.46 123.06 13 0.90 0.121 0.50 108.29 14 1.32 0.111 0.46 133.04 14 0.95 0.108 0.49 117.54 15 1.38 0.100 0.45 142.78 15 0.99 0.096 0.48 126.71 16 1.46 0.092 0.45 152.22 16 1.04 0.086 0.47 135.77 17 1.52 0.085 0.45 161.31 17 10.9 0.077 0.46 144.67 18 1.60 0.082 0.46 169.98 18 1.14 0.071 0.46 153.37 19 1.67 0.081 0.47 178.18 19 1.17 0.066 0.46 161.83 20 1.73 0.083 0.48 -174.16 20 1.18 0.064 0.45 170.00 21 1.82 0.090 0.49 -167.09 21 1.25 0.066 0.45 177.85 22 1.92 0.102 0.51 -160.67 22 1.34 0.073 0.46 -174.66 23 2.01 0.116 0.53 -154.96 23 1.43 0.072 0.46 -167.58 24 2.06 0.132 0.55 -150.02 24 1.46 0.093 0.47 -160.96 25 2.09 0.144 0.57 -146.14 25 1.50 0.103 0.48 -155.33 26 2.15 0.155 0.59 -143.51 26 1.54 0.111 0.48 -151.18
TGF2018 180 um discrete gaas phemt datasheet: rev. d 11-04-13 - 5 of 8 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com rf tuned data at 12 ghz bias conditions unless otherwise noted: v d ? = ? 8 ? v, i dq ? = ? 50% i dss , f ? = ? 12 ghz 0% 10% 20% 30% 40% 50% 60% 0 5 10 15 20 25 30 -10 -5 0 5 10 pae (%) gain (db) / pout (dbm) pin (dbm) gain / pout / pae vs. pin temp.=+25 gain pae pout 0% 10% 20% 30% 40% 50% 60% 0 5 10 15 20 25 30 5 10152025 pae (%) gain (db) pout (dbm) gain / pae vs. pout temp.=+25c gain pae
TGF2018 180 um discrete gaas phemt datasheet: rev. d 11-04-13 - 6 of 8 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com typical performance ? various bias conditions 0 1 2 3 4 5 0 5 10 15 20 25 2 6 10 14 18 22 26 nfmin (db) associated gain (db) frequency (ghz) nfmin and associated gain vs. frequency v ds =+5 v, i ds = 28 ma temp.=+25c gain nfmin 0 1 2 3 4 5 0 5 10 15 20 25 2 6 10 14 18 22 26 nfmin (db) associated gain (db) frequency (ghz) nfmin and associated gain vs. frequency v ds =+2 v, i ds = 28 ma temp.=+25c gain nfmin 0 1 2 3 4 5 0 5 10 15 20 25 2 6 10 14 18 22 26 nfmin (db) associated gain (db) frequency (ghz) nfmin and associated gain vs. frequency v ds =+2 v, i ds = 14 ma temp.=+25c gain nfmin
TGF2018 180 um discrete gaas phemt datasheet: rev. d 11-04-13 - 7 of 8 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com dc characteristics 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 drain current, i ds (a) drain voltage, v ds (v) drain current vs. drain voltage v gs = 0.0 ? v v gs =-0.1 ? v v gs = \ 0.2 ? v v gs = \ 0.3 ? v v gs = \ 0.4 ? v v gs = \ 0.5 ? v v gs = \ 0.6v v gs = \ 0.7 ? v v gs = \ 0.8v v gs = \ 0.9 ? v v gs = \ 1.0 ? v temp.=+25c assembly notes component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment (i.e. epoxy) can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: ? recommend eutectic die attach with ausn (80/20) solder and limit exposure to temperatures above 300 ? c to 30 seconds, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matchi ng is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. interconnect process assembly notes: ? either thermo-compression wedge bonding or ther mosonic ball bonding can be used to bond onto the die. ? force, time, and ultrasonics are critical bonding parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0008-inch wire. ?
TGF2018 180 um discrete gaas phemt datasheet: rev. d 11-04-13 - 8 of 8 - disclaimer: subject to change without notice ? 2013 triquint www.triquint.com product compliance information esd sensitivity caution! esd-sensitive device gaas devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. ? rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free not hast compliant. contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1.503.615.9000 email: info-sales@triquint.com fax: +1.503.615.8902 for technical questions and application information: email: info-networks@triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or li ability whatsoever for any of the information contained herein. triquint assume s no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. a ll information contained herein is subject to change without notice. customers should obtain and verify the latest relevant info rmation before placing orders fo r triquint products. the information contained herein or any use of such information does not grant, exp licitly or implicitly, to any party any patent rights, licenses, or any other inte llectual property rights, whether with r egard to such information itself o r anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life-saving, or life- sustaining applications, or other applications where a fa ilure would reasonably be expected to cause severe personal injury or death.
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